Non-contact electrical characterization of GaN, SiC and AlGaN/GaN for device applications

Corona-Kelvin metrology has been successfully applied to achieve high-precision non-contact electrical characterization of epitaxial GaN, SiC and heteroepitaxial AlGaN/GaN without fabrication of test junction or Schottky diodes. Using the constant surface potential charge deposition method, an excellent dopant repeatability with 0.05% STDEV was demonstrated for n-type GaN with ND=2.9e17cm-3 and 0.1% STDEV For n-type SiC with ND=9.0e15cm-3. For AlGaN/GaN the results demonstrate corona-Kelvin 2DEG profiling with excellent correlation to standard mercury probe CV (MCV) measurement. However the novel charge-based technique demonstrates a unique quantification of 2DEG sheet charge using "charge to depletion". Results for oxidized GaN demonstrate interfacial characterization including Dit spectroscopy.