Experiments and modeling of boron segregation to {311} defects and initial rapid enhanced boron diffusion induced by self-implantation in Si

Boron segregation and transient enhanced diffusion (TED) of boron atoms during annealing were investigated under two types of wafers implanted with Si ions. We found the following facts: (1) boron segregation to {311} defects has been observed at low temperature annealing. (2) {311} defects were formed in the area where the self-interstitial concentration exceeds 3/spl times/10/sup 17/ cm/sup -3/. (3) Free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.