Multi-physics simulation in high power IGBT module design

High power Insulated Gate Bipolar Transistor (IGBT) modules have been utilised in power electronics industrial applications, such as electrical vehicle, traction, renewable energy, et al. The power module with higher power density, higher voltage and current rating, higher switching frequency, higher operation temperature and much lower/higher storage temperature with lower cost is the development tendency driven by the highly competeting market. The standard 3.3kV/1500A single switch IGBT module with 190mm×140mm footprint has been re-designed using latest multiphysics simulation packages together with novel assembly processes and materials to consider electro-magnetic(EM) design, such as partial discharge, low parasitic inductance of module; to design and optimise thermal, mechanical performance of the module.