Novel Poly-Si SJ-LDMOS for System-on-Panel Applications

A superjunction lateral doubled-diffused MOSFET (SJ-LDMOS) that is based on thin-film transistor technology is proposed. To optimize the breakdown voltage (VBD) and specific ON-resistance (R_SP), a new structure called TRI-SJ LDMOS, with a triangular p-pillar and an extended trapezoidal n⁺ region, was designed. The TRI-SJ LDMOS has not only a better VBD than the conventional SJ LDMOS structure on account of its more uniform electric field distribution in the OFF-state, but also a lower RSP on account of the higher current flow in the ON-state. Accordingly, the excellent high-voltage performance of the new polycrystalline silicon TRI-SJ LDMOS makes it a promising candidate for system-on-panel applications.