Complete method for E/sub bd/ correction by series resistance characterization

We have developed a semi-automated method for determining the series resistance profiles of dot capacitors and for obtaining corrected oxide fields at breakdown. This method is based upon a least-squares-fit of IV data, obtained from a voltage-ramp test, to the Fowler-Nordheim leakage model. The profiles provide insight into the general characteristics of series resistance. Certain features of the profiles can be associated with charge trapping and the onset of oxide breakdown.