140 GHz CMOS on-chip dipole antenna with optimal ion-irradiated-silicon with vertical reflector

This paper presents the gain enhancement techniques for a 140 GHz CMOS on-chip antenna. The proposed CMOS on-chip folded dipole antenna is mounted on a metal plate which functions as a reflector. Furthermore, by using ion irradiation which increases the resistivity of the silicon (Si) substrate more than 100 ohms-cm, 5 dB of antenna gain enhancement is achieved. Fabricated in a 40 nm CMOS process, the proposed on-chip antenna achieves an excellent maximum antenna gain of ™2.7 dBi at 140 GHz.