An advanced self-aligned BiCMOS technology for high performance 1-megabit ECL I/O SRAMs

An advanced self-aligned BiCMOS technology has been developed for high-performance 1-Mb ECL I/O SRAMs (emitter-coupled-logic input/output static RAMs). The 0.8 mu m technology features include an advanced, fully recessed oxide isolation, a silicided polysilicon local interconnect scheme, two levels of polysilicon, and two levels of metal with tungsten plugs. These process features combine to produce MOS gate delays in the 100-ps range and bipolar transistors with F/sub T/ of 15 GHz. The manufacturability of the technology has been demonstrated by the successful fabrication of a scaled 256 K ECL I/O SRAM.<>