Enhanced hole drift velocity in sub-0.1 /spl mu/m Si devices caused by anisotropic velocity overshoot

We performed for the first time full band Monte Carlo simulations of anisotropic hole transport in sub-0.1 /spl mu/m Si devices. We found from this simulation of 0.05 /spl mu/m channel p-i-p diodes that the hole drift velocity in the channel with the orientation of <100> with respect to crystallographic direction is enhanced by the velocity overshoot effect, and that the average velocity in the middle of the channel is 25% higher than for a diode in <110> direction at room temperature. These results suggest that the current drive capability of sub-0.1 /spl mu/m pMOSFETs could be optimized by choosing the channel orientation in the <100> direction.