High speed and low power consumption DMT integrated circuits based on direct-coupled FET logic circuits

High-speed and low-power-consumption 5-b shift registers based on 0.5- mu m-gate E/D-DMTs (doped-channel hetero-MISFETs) are described. The devices were fabricated using n/sup +/-GaAs selective MOCVD (metalorganic chemical vapor deposition) growth and AlGaAs-GaAs selective dry etching techniques. The developed technologies allow parasitic resistance reduction and short channel effect suppression, resulting in high-performance E/D-DMTs with excellent uniformity. The ICs fabricated using these technologies operate up to 5 Gb/s with very small power consumption of 45 mW (1.1 mW/gate, 20- mu m width for an E-DMT driver).<>