A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technology

At high frequencies, substrate effects significantly degrade gain and noise figure of LNAs. A new bond-pad structure presented here significantly reduces substrate effects in a 4.4 GHz LNA resulting in a 10 dB increase in gain and a better than 2 dB improvement in noise figure. The inter-pad isolation of the new bond-pad structure is as much as 30 dB better than that of the conventional bond-pads.