A study on the ferroelectric properties of PZT heterolayered thin films

PZT(20/80)/PZT(80/20) heterolayered thin films were fabricated by the spin-coating method. All PZT heterolayered films showed dense and homogeneous structure without the presence of rosette-type microstructure or pyrochlore phase. The lower PZT layers provided the nucleation site for the formation of perovskite phase in upper PZT films. The relative dielectric constant, remanent polarization and coercive field of the PZT-6 heterolayered films were 1385, 8.13 /spl mu/C/cm/sup 2/ and 12.5 kV/cm, respectively. The polarization switching time at /spl plusmn/10 V applied voltage of the PZT-6 heterolayered films was 0.15 /spl mu/sec.