Thermoelectric properties of Ru/sub 2/Si/sub 3/ prepared by FZ and arc melting methods

Thermoelectric properties of undoped and Rh-doped Ru/sub 2/Si/sub 3/ Prepared by arc melting method and undoped Ru/sub 2/Si/sub 3/ by floating zone melting (FZ) method were measured. Electrical resistivity of the undoped arc-melted Ru/sub 2/Si/sub 3/ was very high because of the cracks along the grain boundary. By doping Rh the number of cracks and the value of resistivity in n-type Ru/sub 2/Si/sub 3/ were decreased, but the absolute value of Seebeck coefficient did not so change. In the case of undoped single crystalline Ru/sub 2/Si/sub 3/ prepared by FZ method, low electrical resistivity was obtained indicating Ru/sub 2/Si/sub 3/ as the promising good thermoelectric material.