Electrical characteristics of MIS capacitors with BST thin films deposited on n-Si(100) by the sol-gel method

The application of high dielectric Sr/sub 0.20/Ba/sub 0.8/TiO/sub 3/ (BST) thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on n-Si(100) substrates by the sol-gel method. We examined the characteristics of the MIS capacitor at 30/spl deg/C and 120/spl deg/C. The hysteresis loop was determined by high frequency (1 MHz) capacitance-voltage (C-V) measurement. Also, current-voltage (I-V) characteristics of the MIS capacitor were investigated. The BST MIS structure showed a relatively high dielectric constant in the insulator. It was found that the small signal capacitance of the MIS capacitors was affected by the ferroelectric properties of the BST films. The I-V measurement revealed that the BST films obey Frenkel-Poole emission conduction process under high electric field.