Properties and design optimization of photo-diodes available in a current CMOS technology

The properties of various photo-diodes available from a standard CMOS technology have been studied. These include light intensity dependent photo-current, turn-on and turn-off characteristics, diode capacitance, and design optimization for high responsivity. The MOSIS HP 0.8 /spl mu/m CMOS technology has been selected to fabricate the test photo-diodes. Based on the results, the methodology to design optimal photo-diodes for low power CMOS imaging system will be discussed.