Interdiffusion in GaAs-AlGaAs quantum wells using anodic and thermal oxides of GaAs

Interdiffusion in quantum wells (QW) is of current interest for optoelectronic device applications. Interdiffusion between quantum well and barriers allow the modification of quantum well shapes which in turn leads to changes in subband energies in the conduction and valence bands. This allows to modify band gap energy, absorption coefficient and refractive index. Monolithic integration of various optoelectronic devices such as lasers, modulators, detectors and waveguides can be achieved by selective area quantum well intermixing/interdiffusion.