ROFF/RON ratio of nano-well fluidic memristor sensor towards hydroxide based liquid detection

This paper reports a new design of TiO₂ thin film memristor sensor with nano-well implementation. Three nano-wells with diameters of 0.5, 1 and 2 mm fabricated using lift-off techniques. 30 nm TiO₂ thin film deposited using RF sputtering process. The behavior of the nano-well memristor sensor was being observed through ROFF/RON ratios to represent the hysteresis loop area of the memristor sensor. The ROFF/RON ratio was being observed in two conditions; free liquid and with liquid. For free liquid, the nano-well memristor was exposed to air while with liquid condition, three glucose concentrations of 10, 20 and 40 mM were used. Experiment shows that ROFF/RON ratio increased as the nano-well diameter increased. The existence of glucose liquid also contributed to the increase in the ratio.