InAs channel HFETs: current status and future trends

We review the development of InAs/AlSb HFETs, and discuss some of the outstanding problems along with their potential solutions. InAs/AlSb HFETs offer good microwave performance at very low biases, and they are therefore of interest for low-power wireless applications as well as ultrahigh frequency transistors: preliminary measurements suggest a 1 THz bandwidth may be achieved.