Resonant-cavity InGaAs-InAlAs separate absorption, charge and multiplication avalanche photodiodes

Summary form only given. High-speed avalanche photodiodes (APDs) are often used in optical communication systems due to their increased sensitivity as compared to conventional p-i-n photodetectors. The crucial performance parameters for this application are low multiplication noise and high gain-bandwidth. Recently, we have demonstrated low multiplication noise and record gain-bandwidth product (290 GHz) using an AlGaAs-GaAs-InGaAs resonant-cavity APD with separate absorption, charge and multiplication (SACM) regions. Those devices operated in the wavelength range near 0.9 /spl mu/m. In this paper, we have extended this work to 1.55 /spl mu/m using InAlAs-lnGaAs materials system.