An on-chip active frequency multiplier-by-seven (X-band to W-band) for millimeter-wave signal generation

This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm², 0.31 mm² the multiplier area and 0.61 mm² the PA area. Achieving Psat of 6 dBm at 82 GHz.