Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting Diode

InGaN/GaN single nanorod (NR) light-emitting diodes (LEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current-voltage characteristics of single NR LEDs show low leakage current of 2 × 10
^-12
A at a reverse bias of -5 V and turn-ON voltage of ~3.8 V. Linear polarization-oriented parallel to the c-axis with a degree of ~50% was discovered from the electroluminescence emission of single NR LEDs.