Perpendicular magnetic field dependence of triangular triple silicon quantum dot system

We have fabricated a triangular triple quantum dot system with 3 leads, which is made on a silicon-on-insulator wafer by dry etching and integrated with a single electron transistor as charge sensor. We have successfully monitored the charge transitions of each dot by charge sensor. We have observed charge degeneracy point and investigated a dependence of the point on perpendicular magnetic field.