0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

0.25 μm gate AlGaN/GaN/SiC HEMT's nonlinearity modelling and characterization over a wide temperature and frequency have been studied for the first time. The nonlinearity of these devices has been carried out using a two-tone intermodulation distortion. An empirical analytical model has been developed and good agreement was established between the simulated and measured data. This result is valuable for the future design optimizations of the advanced GaN based MMIC's operating at high temperature.