Q-switched and mode-locked QW diode lasers with implanted multisectional saturable absorber

A process of implantation of high energy heavy ions into the emitter layer of a semiconductor laser has been developed to create distributed ultrafast saturable absorber regions integrated within the cavity of a QW laser. A picosecond Q-switched laser diode delivering increased average power has been fabricated and multiple colliding pulse modelocked regime has been demonstrated with QW diode lasers having an implanted multisectional saturable absorber.