Dosimetric characteristics of the indium phosphide based photoconvertors

The results of dosimetric characteristics investigations for the detectors fabricated on the basis of ITO-InP structures of SIS types are given. It was shown that between short circuit current and X-rays irradiation dose power there is a linear dependance as in the case of the studied convertors lumination with integral light from the visible region of spectrum. The sensitivity of ITO-InP structures functioning as X-ray detectors is of 3 /spl mu/A/(rad min) cm/sup 2/ which indicates the possibility of their utilization as an active element of ionizing radiation detecting devices.