Study of Ni-based ohmic contacts fabricated on n-6H-SiC polar faces

Electrical characteristics and composition of interface region were studied for Ni-based ohmic contacts prepared on the n-6H-SiC polar faces at the various annealing temperatures. Specific contact resistance as well as composition of interface region depends strongly on annealing temperature and surface orientation. The data are reported on dependence of specific contact resistance on uncompensated impurity concentration. Fabricated ohmic contacts show stable electrical characteristics at the environment temperatures up to 550/spl deg/C and current densities up to 10/sup 4/ A/cm/sup 2/.