Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structures

The effect of proton irradiation on the value of the steady state lifetime of the nonequilibrium carriers in 6H-SiC epitaxial pn structures was investigated. The lifetime was determined as parameter of the Sah-Noyce-Shockley model, which was used for interpretation of the forward currents at current densities 10/sup -6/