Improvement of the recovery characteristics of high power thyristors by selective irradiation

A method to improve the switching time of the fast high power thyristors is described. The task is to obtain low turn off time with a rate of the reapplied voltage of 400 V//spl mu/s. The method combines the gold diffusion with the localized electron irradiation. This is a good compromise to obtain the required limits for both V/sub T/ and I/sub R/ (125/spl deg/C).