A modelling approach for dual mode thyristor devices

This paper presents an approach (the RC line method) that is suitable for accurately modelling various types of dual mode thyristors (by adopting suitable modifications). This is the first time the method has been used on the popular simulator, PSPICE. Results are presented illustrating the approach as applied to a particular type of dual mode thyristor, the MOS and Bipolar Gated Thyristor (MBGT). The results obtained with the 7 RC cells are seen to be quite acceptable and in this case have excellent accuracy in most features of the waveforms.