ESD characterization of diodes and ggMOS in Germanium FinFET technologies

Germanium as a high mobility material is a candidate to replace Silicon as channel material for future scaled FinFETs. This work presents the ESD robustness of gated diodes and ggMOS in Ge FinFETs. Relaxed Germanium ggPMOS shows 3 x higher failure current compared to Strained Ge on SiGe, because of low thermal conductivities of SiGe layer underneath sGe.