Fault detection for SiC-Mosfet based on the behavior of gate signal

We present the design and simulation of a fault detection circuit applied to a Silicon Carbide Mosfet (SiC-Mosfet), fault detection is done by examining the behavior of gate signal. The most important aspects that have been made and are reported specifically: early detection, since the evaluation is done during the transient of turn-on, allowing early detection in the case of short-circuit, failure detection times small as which prevents to the spread to full system. To validate the system, this was designed and applied to failure detection to Boost-Converter with SiC-Mosfet, the simulation results to validate the robustness and reliability of the electronic system designed.