A silicon carbide CMOS intelligent gate driver circuit

The design and fabrication of a high-temperature mixed-signal IC using silicon carbide CMOS technology is presented. The mixed-signal IC implements an intelligent gate driver circuit intended for high-power switching devices. Using a temperature-insensitive comparator, several functions including overvoltage, undervoltage, short-load and open-load detection are provided, all of which are operational up to 300/spl deg/C. These ICs are ideally suited for harsh, high-temperature environments such as automotive and aircraft engines.