High temperature capability of devices on Si and wide bandgap materials

Technology based on Si and GaAs is not adequate to meet the requirements of high power, high temperature operation in caustic environments. Wide bandgap semiconductors are being explored for usage in such applications. In this paper, the applicability of GaN in high power semiconductor devices is evaluated with respect to similar devices based on Si and 6H-SiC. Static and transient performance at room temperature and 200/spl deg/C is compared for 6000 V devices designed on these materials. It is shown that wide bandgap materials show up an order of magnitude improvement in switching performance over Si. In addition, the potential of GaN in high power applications is clearly identified.