Fabrication Of Nanometer-Order Dot Patterns By Lift-Off Using Fullerene-Incorporated Bilayer Resist System

An array of dots with dimensions smaller than 50 nm is of great interest in the fabrication of quantum box lasers and nanocompact disks. Such dot patterns are generally produced by electron-beam lithography, either by using a positive-type bilayer resist system of polymethyl methacrylate (PMMA) and a lift-off technique 1) or a high-resolution negative-type resist like calixarene resists.2)