Synthesis And Characterization Of Alicyclic Polymers With Hydrophilic Groups For 193-nm Single-Layer Resist

ArF excimer laser (λ = 193nm) lithography is a potentially applicable technology for sub 0.15μm design rule. However, in practical use of ArF technology, there are amny problems involved in the properties of photoresist such as light transparecy for 193 nm, dry etching resistance, adhesion, sensitivity and use of 2.38wt% tetramethyl ammonium hydroxide (TMAH) aqueous solution as a developer.