Characterization Of Proximity Correction In 0.1 /spl mu/m Regime X-Ray Lithography

The proximity correction in X-ray lithography has been ignored because of the short wavelength of X-ray, while various OPC(0ptical Proximity Correction] techniques have been widely used to enhance the quality of printed pattern in advanced optical lithography. But as the application of XRL to semiconductor production has been delayed down to 0.13 μm design rule, the proximity correction in mask pattern need to be considered to satisfy the strict design requirement needed in ULSI devices. Some efforts for correcting mask pattern had been already tried to solve the problem of line end shortening.['] This article proposes the possibility and usefulness of proximity correction in 0.1 μm regime XRL.