Study on GaN-based light-emitting diodes with graded-thickness quantum barriers

GaN-based light emitting diodes (LEDs) with graded-thickness quantum barriers (GQB) is studied. Simulation results show that GaN-based LEDs with GQB has better performance than conventional GaN-based LEDs with uniform thickness barriers, the major physical cause is attributed to the superior hole distribution in the quantum wells due to the appropriate energy band diagram.