High quality low-dose low-energy SIMOX implanted in high current oxygen implanter

Summary form only given. Fully-depleted circuits require application of very thin and uniform SOI layers. For large volume supply, the cost of fabrication must complement high quality material performance. In SIMOX technology, these requirements imply the need for the development of a cost efficient, low oxygen dose process. In this work, SIMOX structures have been formed by oxygen implantation with ion energy of 65 keV in an Ibis 1000 high current oxygen implanter. The silicon substrate temperature was 500/spl deg/C during implantation and the beam current was 40 mA. Doses in the range 0.15/spl times/10/sup 18/ to 0.7/spl times/10/sup 18/ O/sup +//cm/sup 2/ were implanted into the Cz, <100> oriented, p-type, 10-20 /spl Omega/-cm, 150 mm diameter Si wafers. Implanted wafers were annealed at 1350/spl deg/C for 4 hours in Ar (<1% O/sub 2/) and characterized by spectroscopic eliipsometry (SE), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), SIMS, and atomic force microscopy (AFM). The silicon layer defect density was determined using an enhanced Secco etch technique and optical microscopy. The integrity of the buried oxide was examined by measurement of the current-voltage characteristics of the BOX capacitors.