Temperature effects on current-voltage and low frequency noise characteristics of multilayer WSe2 FETs

We investigates the temperature effect on current-voltage and low frequency noise of multilayer WSe2 FETs. The field effect mobility (μFE), Ion/Ioff, subthreshold slope (SS) and hysteresis were deteriorated as the temperature increases. It is because of enhanced phonon scattering and increase of thermally generated carrier density. From the dependence of noise power spectral density of drain current, carrier mobility fluctuation is considered as a dominant low frequency noise mechanism. The extracted Hooge's parameter slightly increased with temperature increase. It is because of enhanced phonon scattering.