IGBT module characterization, modeling and parasitic extraction

IGBT modules are extensively used in power electronic circuit applications. It is important to understand the limits imposed by unfavorable circuit conditions on the performance of the IGBT module in the development of robust power electronic systems. Since an antiparallel diode is also used in conjunction with IGBT, it becomes important to characterize the whole IGBT module for accurate prediction of the performance of both the devices under normal and stressful operating conditions. If the resulting power dissipation is not handled carefully, it may lead to the thermal runaway of the whole module. Since an IGBT module consist of four devices, viz. two IGBTs and two diodes, the parasitic elements play a major role in the design and layout of the package and high power high frequency power stages. Thermal stresses generated because of power dissipation in parasitics and devices are of major concern in the reliability study of power modules. Thus accurate characterization and modeling along with the knowledge of package parasitics is necessary in the development of next generation IGBT modules.