Simulation and characterization of dual-gate SOI MOSFET, on-chip fabricated with ISFET

The paper presents the process design, simulation and characterization of a silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG MOSFET) with Al metal gate. The proposed structure is an N-channel device, using aluminum nitride (AlN) as gate dielectric. The fully depleted SOI-based DG ISFET compatible with the complementary metal-oxide-semiconductor (CMOS) process is considered to be a very promising bio-chemical sensor. Silvaco^® TCAD tool is used to perform process design and simulations. The simulated and experimental results are compared, and are found to be in good agreement.