A unified epi-seal process for resonators and inertial sensors

A thin-film wafer-level encapsulation process which incorporates both narrow (0.7 μm) and wide (>50 μm) lateral transduction gaps, in-plane and out-of-plane electrodes, and does not require release etch-holes is presented. High stability, high quality factor (Q) resonant devices as well as inertial sensors are fabricated in the process. The great diversity of functioning devices built in this process demonstrates the potential for combinations of high-performance MEMS devices in a single process and even in single chips.