Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material

Summary form only given. We propose a technique based on connecting CM like VO
₂
in parallel with the MTJ in the read path of multi-port MRAMs. Utilizing insulator-metal transitions in CM, the proposed cell achieves 1.7X to 4.3X improvement in cell TMR (CTMR) along with 7% to 22% higher read disturb margin compared to a baseline cell. Due to the separation of read-write paths in multi-port MRAMs, the CM has no effect on the write operation. The proposed idea is not limited to VO
₂
and its benefits may be further enhanced by exploring other suitable CMs [6] or by tuning the properties like resistivities, critical currents and thermal stability by techniques like strain [7] or Cr doping [8].