Process-dependent Thermophysical Properties Of CMOS IC Thin Films

We give the first overview of measured thermophysical properties of thin films produced by three commercial CMOS IC processes. Values and temperature coefficients of the thermal conductivities, heat capacities, electrical resistivities, charge carrier densities, and Seebeck coefficients of various CMOS layers are reported. The properties were measured with dedicated CMOS compatible microstructures in the temperature range from 100 to 420 K. Preliminary conclusions are drawn on systematic, process-independent, relationships between some properties and on the distinct process-dependence of others.