A high voltage mm-wave stacked HEMT power amplifier in 0.1 µm InGaAs technology

A stacked HEMT PA has been designed and implemented in a commercial 0.1 μm InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15% at 61GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2mm² which makes this the most power dense V-band amplifier reported from GaAs with 100mW/mm².