Nonparabolicity and confinement effects of IIIV materials in novel transistors

Employing a 8 band k.p solver, the self-consistent band structure of the rectangular IIIV nanowires (NW) has been calculated. It is shown that the strong confinement combined with the band nonparabolicity will considerably change the effective masses and the band gap. The mass tensor elements get heavier than the bulk values and improve the density of state (DOS) and centroid capacitance accordingly, while in return the mobility will be degraded. The band widening has also been calculated for different width and height combinations. It is shown that oxide thickness scaling cannot compensate the poor DOS of IIIV, where the silicon device exhibits a continuous performance boost by thinning the oxide layer. Possible improvements of DOS through the width and the mole fraction modulation have been investigated.