Performance analysis of an RF MEMS TPoS resonator using FE modelling

This paper presents an analysis, using finite element modelling, of a 40 MHz contour-mode RF MEMS resonator based on the SINTEF thin-film piezoelectric-onsubstrate (TPoS) fabrication technology. Novel simulation techniques are proposed which enable an exhaustive analysis of the relevant resonator characteristics including temperature drift and quality factor. This model also enables the analysis of possible tuning techniques which can be used to compensate for temperature and process-induced variations in the resonant frequency. The effect of the thickness ratio of the PZT film to the substrate on the resonant frequency and frequency shift is also discussed.