Interface characteristics of Si/Si junctions by using surface-activated bonding

We investigated the electrical properties of highly-doped n-Si/n-Si and p-Si/p-Si junctions fabricated by using the surface activated bonding. Heights of potential barrier formed at the respective bonding interface were estimated by measuring dependence of their current-voltage characteristics on the ambient temperature. The heights of barrier were found to be varied due to annealing often the bonding process. An analysis using the charge neutral level model suggested that the density of interface states that were likely to be formed during the surface activation process was lowered to ~10¹²cm^-2eV^-1 due to the annealing, similarly to results for more heavily doped Si/Si junctions.