A self-compliance RRAM device for high density cross-point array applications

RRAM devices with AlOδ/Ta2O5−x/TaOy triple-layer structure were fabricated and electrically characterized. DC sweeping measurements without external current compliance were carried out at temperatures ranging from −10°C to 110°C. Stable self-compliance property was observed. More than 10¹⁰ cycles pulse programming operations without external current limit element were demonstrated. Those cells showed no data retention deterioration for more than 3 hours at 150°C.