Aspects of increased power density with the new 5th generation IGBT demonstrated by application relevant measurements

The objective of this paper is to illustrate the measurement results of a high power density water-cooled power stack demonstrator with the new 5th generation power semiconductor (IGBT5). At the same time, all other surrounding system components such as capacitors and driver boards are maintained at acceptable temperature levels. This paper consists of two sections namely the design of a new power stack with IGBT5 having a maximum operating junction temperature of 175deg C and secondly the comparison of the stack with the existing 4th generation power semiconductor stack. Key application oriented parameters such as the heat sink temperature, bus bar temperature and AC terminal temperature are measured and compared. The achievable increase in power density using this new device is illustrated under well-defined conditions. Finally, some guidelines are suggested which the designer should take into consideration while utilizing the new 5th generation power semiconductor's increased operating junction temperature.