Control Method for a Reverse Conducting IGBT

Combining IGBT and diode functionality into one piece of silicon, a reverse conducting IGBT (RC-IGBT) is created. This measure allows equipping a standard IGBT/diode-module with only one piece of chip by replacing IGBT and diode with the new RC-IGBT. The result is an enhanced current carrying capability without increasing the foot print of the module. As a result of the integration, the diode's electrical performance can be influenced by the control state of the IGBT gate. In order to control the RC-IGBT system in a loss optimized manner, special control aspects need to be considered.